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AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROHS & Sony 259 specifications). AON4701L is a Green Product ordering option. AON4701 and AON4701L are electrically identical.
Features
VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90m (VGS = -4.5V) RDS(ON) < 120m (VGS = -2.5V) RDS(ON) < 160m (VGS = -1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
D A A S G 1 2 3 4 8 7 6 5 K K D D G S
K
DFN3X2 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C ID Continuous Drain Current A TA=70C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25C IF A Continuous Forward Current TA=70C IFM Pulsed Forward Current B TA=25C PD TA=70C Power Dissipation TJ, TSTG Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL MOSFET -20 8 -3.4 -2.7 -15
A
Schottky
Units V V A
20 1.9 1.2 1.7 1.1 -55 to 150 Typ 49 81 37 60 89 40 7 0.96 0.62 -55 to 150 Max 75 100 45 75 130 50
V A
W C Units C/W
C/W
AON4701
Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A TJ=125C -0.3 -15 -0.63 73 102 95 123 7 -0.83 Min -20 -1 -5 100 -1 90 125 120 160 -1 -2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC 0.5 0.1 20 34 5.2 0.8 10 V mA pF ns nC
Static Drain-Source On-Resistance
gFS VSD IS
VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.5A VDS=-5V, ID=-3.4A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
4
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
540 72 49 12 6.1 0.6 1.6 10 12 44 22 21 7.5 0.39
VGS=-4.5V, VDS=-10V, ID=-3.8A
VGS=-4.5V, VDS=-10V, RL=2.6, RGEN=3 IF=-3.8A, dI/dt=100A/s IF=-3.8A, dI/dt=100A/s IF=0.5A VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0. December 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C
25C 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0
165
1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics
0.5
2
160 150 140 130 RDS(ON) (m) 120 110 100 90 80 70 60 50 0 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 2 VGS=-4.5V VGS=-2.5V VGS=-1.8V Normalized On-Resistance
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-3.4A VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.5A
VGS=-4.5V ID=-3.4A
200
150 RDS(ON) (m) -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.4A Capacitance (pF) 800 Ciss
600
400
200
Crss Coss
165
20
0 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 T J(Max)=150C T A=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s DC 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100s 10s 1ms 10ms Power (W)
20
T J(Max)=150C T A=25C
15
10
5
0.1
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD T on T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AON4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E+01 125C Capacitance (pF) 1.0E+00 IF (Amps) 80 60 40 20 25C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 100 f = 1MHz
1.0E-01
1.0E-02
0.5
1.0E-02
Leakage Current (A)
0.4 VF (Volts) IF=0.5A 0.3
1.0E-03 VR=16V
1.0E-04
0.2
1.0E-05
0.1 0 25 50 75 100 Temperature (C) 125 150
1.0E-06 0 25 50 75 100 125 150 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature
Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse T 10 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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